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| 28V P-Channel Power MOSFET General Description The AAT8513 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTechTM's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been squeezed into the footprint of a SC70 package. AAT8513 Features * * * VDS(MAX) = -28V ID(MAX) 1 = -2.6A @ 25C Low RDS(ON): * 130 m @ VGS = -4.5V * 210 m @ VGS = -2.5V SC70JW-8 Package Applications * * * Battery Packs Cellular & Cordless Telephones Battery-powered portable equipment D 8 Preliminary Information Top View D 7 D 6 D 5 1 S 2 S 3 S 4 G Absolute Maximum Ratings Symbol VDS VGS ID IDM IS PD TJ, TSTG (TA=25C unless otherwise noted) Value -28 12 2.6 2.1 12 -1.1 1.5 1.0 -55 to 150 Description Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TJ=150C 1 Units V TA = 25C TA = 70C 1 Pulsed Drain Current 2 Continuous Source Current (Source-Drain Diode) Maximum Power Dissipation 1 A TA = 25C TA = 70C W C Operating Junction and Storage Temperature Range Thermal Characteristics Symbol RJA RJA2 RJF Description Junction-to-Ambient steady state 1 Junction-to-Ambient t<5 seconds 1 Junction-to-Foot 1 Typ 107 68 40 Max 130 83 48 Units C/W C/W C/W 8513.2003.09.0.62 1 28V P-Channel Power MOSFET Electrical Characteristics Symbol Description (TJ=25C unless otherwise noted) Conditions VGS=0V, ID=-250A VGS=-4.5V, ID=-2.6A VGS=-2.5V, ID=-2.1A VGS=-4.5V, VDS=-5V (Pulsed) VGS=VDS, ID=-250A VGS=12V, VDS=0V VGS=0V, VDS=-28V VGS=0V, VDS=-23V, TJ=70C 3 VDS=-5V, ID=-2.6A VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, VDS=-15V, 2 AAT8513 Min -28 Typ Max Units V DC Characteristics BVDSS Drain-Source Breakdown Voltage RDS(ON) ID(ON) VGS(th) IGSS IDSS Drain-Source ON-Resistance On-State Drain Current 2 Gate Threshold Voltage Gate-Body Leakage Current Drain Source Leakage Current 2 100 160 -12 -0.6 130 210 m A V nA A S 100 -1 -5 4 5.5 0.8 1.8 7 20 55 35 -1.3 -1.1 gfs Forward Transconductance 2 Dynamic Characteristics 3 QG Total Gate Charge QGS Gate-Source Charge QGD Gate-Drain Charge tD(ON) Turn-ON Delay tR Turn-ON Rise Time tD(OFF) Turn-OFF Delay tF Turn-OFF Fall Time Source-Drain Diode Characteristics VSD Source-Drain Forward Voltage IS Continuous Diode Current 1 RD=5.8, RD=5.8, RD=5.8, RD=5.8, RD=5.8, RD=5.8, RD=5.8, VGS=-4.5V VGS=-4.5V VGS=-4.5V VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, VGS=-4.5V, nC RG=6 RG=6 RG=6 RG=6 ns VGS=0, IS=-2.6A V A Note 1: Based on thermal dissipation from junction to ambient while mounted on a 1" x 1" PCB with optimized layout. A 5 second pulse on a 1" x 1" PCB approximates testing a device mounted on a large multi-layer PCB as in most applications. RJF + RFA = RJA where the foot thermal reference is defined as the normal solder mounting surface of the device's leads. RJF is guaranteed by design, however RCA is determined by the PCB design. Actual maximum continuous current is limited by the application's design. Note 2: Pulse test: Pulse Width = 300 s Note 3: Guaranteed by design. Not subject to production testing. 2 8513.2003.09.0.62 28V P-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Output Characteristics 12 10 8 AAT8513 Transfer Characteristics 12 5V 4.5V 4V 3.5V 3V 2.5V 2V 1.5V 10 8 VD = VG 25C 125C IDS (A) ID (A) 6 4 2 0 0 0 .5 1 1 .5 6 4 2 0 -55C 2 2 .5 3 0 1 2 3 4 5 VDS (V) VGS (V) On-Resistance vs. Drain Current 0.5 0.4 On-Resistance vs. Gate to Source Voltage 0.4 0.35 ID = 2.6A RDS(ON) () RDS(ON) () 4 6 8 10 12 0.3 0.25 0.2 0.15 0.1 0.3 0.2 0.1 0 0 2 VGS = 2.5V VGS = 4.5V 0.05 0 0 1 2 3 4 5 ID (A) VGS (V) On-Resistance vs. Junction Temperature 1.8 Threshold Voltage 0.4 0.3 Normalized RDS(ON) 1.6 1.4 1.2 1.0 0.8 0.6 -50 VGS(th) Variance (V) VGS = 4.5V ID = 2.6A ID = 250A 0.2 0.1 0 -0.1 -0.2 -25 0 25 50 75 100 125 150 -0.3 -50 -25 0 25 50 75 100 125 150 TJ (C) T J (C) 8513.2003.09.0.62 3 28V P-Channel Power MOSFET Typical Characteristics (TJ = 25C unless otherwise noted) Gate Charge 5 4 3 2 1 0 0 1 2 3 4 5 6 AAT8513 Source-Drain Diode Forward Voltage 100 VD = 15V ID = 2.6A 10 VGS (V) IS (A) 1 TJ = 150C TJ = 25C 0.1 0 0 .2 0.4 0 .6 0.8 1 1.2 VSD (V) QG, Charge (nC) Capacitance 600 500 Capacitance (pF) 400 300 200 100 0 Ciss Coss Crss 0 7 14 21 28 VDS (V) 4 8513.2003.09.0.62 28V P-Channel Power MOSFET Ordering Information Package SC70JW-8 Marking IMXYY 1 AAT8513 Part Number (Tape and Reel) AAT8513IJS-T1 Note 1: XYY = assembly and date code. Package Information SC70JW-8 0.50 BSC 0.50 BSC 0.50 BSC 1.75 0.10 0.225 0.075 2.00 0.20 2.20 0.20 0.048REF 0.15 0.05 0.85 0.15 1.10 MAX 0.100 7 3 0.45 0.10 2.10 0.30 4 4 All dimensions in millimeters. 0.05 0.05 8513.2003.09.0.62 5 28V P-Channel Power MOSFET AAT8513 AnalogicTech cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in an AnalogicTech product. No circuit patent licenses, copyrights, mask work rights, or other intellectual property rights are implied. AnalogicTech reserves the right to make changes to their products or specifications or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. All products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. AnalogicTech warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with AnalogicTech's standard warranty. Testing and other quality control techniques are utilized to the extent AnalogicTech deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed. Advanced Analogic Technologies, Inc. 830 E. Arques Avenue, Sunnyvale, CA 94085 Phone (408) 737-4600 Fax (408) 737-4611 6 8513.2003.09.0.62 |
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